NTGD4161P
ELECTRICAL CHARACTERISTIC S (T J =25 ° C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
Drain?to?Source Breakdown Voltage
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ?250 m A
?30
22
V
mV/ ° C
Temperature Coefficient
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
T J = 25 ° C
?1.0
m A
V DS = ?24 V
T J = 125 ° C
?10
Gate?to?Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = ?250 m A
?1.0
?1.9
?3.0
V
Gate Threshold Temperature
V GS(TH) /T J
?4.7
mV/ ° C
Coefficient
Drain?to?Source On Resistance
R DS(on)
V GS = ?10 V, I D = ?2.1 A
105
160
m Ω
V GS = ?4.5 V, I D = ?1.6 A
190
280
Forward Transconductance
g FS
V DS = ?5.0 V, I D = ?2.1 A
2.7
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
281
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V DS = ?15 V, f = 1.0 MHz,
V GS = 0 V
50
28
Total Gate Charge
Threshold Gate Charge
Gate?to?Source Charge
Gate?to?Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = ?10 V, V DS = ?5.0 V,
I D = ?2.1A
5.6
0.65
1.2
0.90
7.1
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn?On Delay Time
t d(on)
7.6
14
ns
Rise Time
Turn?Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = ?4.5 V, V DD = ?15 V,
I D = ?1.0 A, R G = 6.0 Ω
9.2
12.5
4.5
23
20
12
DRAIN?SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
T J = 25 ° C
?0.79
?1.2
V
I S = ?0.8 A
T J = 125 ° C
?0.65
Reverse Recovery Time
t RR
8.0
Charge Time
Discharge Time
Reverse Recovery Charge
t a
t b
Q RR
V GS = 0 V, dI S /dt = 100 A/ m s,
I S = ?0.8 A
5.7
2.3
3
ns
nC
3. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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